From July 17 to 20, 2019, the second Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM2019) was held at Beijing Century Jinyuan Hotel.

　　The conference focuses on wide band gap semiconductor material growth technology, material structure and physical properties, photoelectron and power device research and related equipment development, wide band gap semiconductor device packaging module industry and standardization development and other fields to carry out extensive exchanges, which can promote mutual exchanges and cooperation, and realize the rapid and healthy development of the wide band gap semiconductor industry in the Asia-Pacific region.

　　The Conference Site

　　Global Power Technology (Beijing) Co., Ltd. (hereinafter referred to as "GPT") attended this conference as an exhibitor.

　　In the conference, GPT showed the audience a series of silicon carbide power devices such as 600-3300v (2A-100A) schottky diodes, silicon carbide half-bridge hybrid modules, SIC MOSFETs, etc., which were praised and recognized by the industry, and also received high attention from domestic and foreign industry chain peers.

　　Welcome domestic and foreign device manufacturers, scientific institutions and application vendors to cooperate with us. Let us work together to make our life more enjoyable and less consuming.